|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench(R) MOSFET September 2008 FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.5 A, 23 m Features Max rDS(on) = 23 m at VGS = 4.5 V, ID = 9.5 A Max rDS(on) = 29 m at VGS = 2.5 V, ID = 8.0 A Max rDS(on) = 36 m at VGS = 1.8 V, ID = 4.0 A Max rDS(on) = 50 m at VGS = 1.5 V, ID = 2.0 A HBM ESD protection level > 2.5 kV (Note 3) Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm RoHS Compliant tm (R) General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Applications Li-lon Battery Pack Pin 1 D D G Bottom Drain Contact D D 1 2 3 6 5 4 D D Drain Source G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25 C TA = 25 C (Note 1a) (Note 1b) TA = 25 C (Note 1a) Ratings 20 8 9.5 24 2.4 0.9 -55 to +150 Units V V A W C Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 C/W Package Marking and Ordering Information Device Marking 410 Device FDMA410NZ Package MicroFET 2X2 Reel Size 7 '' Tape Width 12 mm Quantity 3000 units (c)2008 Fairchild Semiconductor Corporation FDMA410NZ Rev.B 1 www.fairchildsemi.com FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 16 V, VGS = 0 V VGS = 8 V, VDS = 0 V 20 17 1 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 4.5 V, ID = 9.5 A VGS = 2.5 V, ID = 8.0 A rDS(on) Static Drain to Source On Resistance VGS = 1.8 V, ID = 4.0 A VGS = 1.5 V, ID = 2.0 A VGS = 4.5 V, ID = 9.5 A, TJ = 125 C gFS Forward Transconductance VDD = 5 V, ID = 9.5 A 0.4 0.7 -3 17 20 24 29 23 35 23 29 36 50 32 S m 1.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10 V, VGS = 0 V, f = 1 MHz f = 1 MHz 815 130 85 2.1 1080 175 130 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 4.5 V , VDD = 10 V, ID = 9.5 A VDD = 10 V, ID = 9.5 A, VGS = 4.5 V, RGEN = 6 7.5 3.9 27 3.7 10 1.2 2.0 15 10 44 10 14 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2.0 A (Note 2) 0.7 12 2.6 2.0 1.2 22 10 A V ns nC IF = 9.5 A, di/dt = 100 A/s NOTES: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. a.52 C/W when mounted on a 1 in2 pad of 2 oz copper. b. 145 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. (c)2008 Fairchild Semiconductor Corporation FDMA410NZ Rev.B 2 www.fairchildsemi.com FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 24 20 ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 3.5 V VGS = 2.5 V VGS = 1.8 V VGS = 1.5 V 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 1.2 V 3.5 3.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX VGS = 1.5 V 16 12 8 4 0 0.0 2.5 2.0 1.5 1.0 0.5 0 4 8 VGS = 3.5 V VGS = 4.5 V VGS = 1.8 V VGS = 2.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX VGS = 1.2 V 0.5 1.0 1.5 2.0 12 16 20 24 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 60 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 9.5 A VGS = 4.5 V ID = 4.75 A PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 1.4 1.2 1.0 0.8 0.6 -75 rDS(on), DRAIN TO 50 40 TJ = 125 oC 30 20 TJ = 25 oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 10 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 24 20 ID, DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 30 10 VGS = 0 V VDS = 5 V 16 12 TJ = 125 oC 1 TJ = 125 oC TJ = 25 oC 0.1 8 TJ = 25 oC 0.01 4 TJ = -55 oC TJ = -55 oC 0 0.0 0.5 1.0 1.5 2.0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2008 Fairchild Semiconductor Corporation FDMA410NZ Rev.B 3 www.fairchildsemi.com FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 5 VGS, GATE TO SOURCE VOLTAGE (V) 2000 ID = 9.5 A 4 3 2 1 0 0 2 4 6 8 10 12 Qg, GATE CHARGE (nC) 1000 CAPACITANCE (pF) Ciss VDD = 8 V VDD = 10 V VDD = 12 V Coss 100 50 0.1 f = 1 MHz VGS = 0 V Crss 1 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 40 10 Ig, GATE LEAKAGE CURRENT (A) -2 10 10 10 10 10 -4 -ID, DRAIN CURRENT (A) 10 -3 VGS = 0 V 10 0.1 ms -5 TJ = 125 o C 1 THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms 100 ms 1s 10 s DC -6 TJ = 25 oC -7 0.1 SINGLE PULSE TJ = MAX RATED RJA = 145 C/W o -8 0 3 6 9 12 15 0.01 0.1 TA = 25 oC 1 10 50 VGS, GATE TO SOURCE VOLTAGE (V) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage 50 VGS = 4.5 V P(PK), PEAK TRANSIENT POWER (W) Figure 10. Forward Bias Safe Operation Area SINGLE PULSE RJA = 145 oC/W TA = 25 oC 10 1 0.5 -3 10 10 -2 10 -1 10 0 10 1 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation (c)2008 Fairchild Semiconductor Corporation FDMA410NZ Rev.B 4 www.fairchildsemi.com FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZJA D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 SINGLE PULSE RJA = 145 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -1 0 1 0.01 -3 10 10 -2 10 10 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation FDMA410NZ Rev.B 5 www.fairchildsemi.com FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench(R) MOSFET Dimensional Outline and Pad Layout 0.10 C 2.000 2X 1.05 (0.47) 0.10 C PIN#1 LO CATIO N 1.00 6 4 NO D RAIN O G R ATE TRACES ALLO ED IN W THIS AREA 2.000 1.35 0.66 2.30 2X 1 0.65 TYP 3 0.40 TYP 0.8 M AX 0.10 C (0.20) 0.08 C RECO M M ENDED LAND PATTERN O 1 PT 0.05 0.00 C 1.00 6 SEATING PLANE (0.30) 4 PIN #1 IDENT 0.33 0.20 1.000 0.800 1 3 1.05 (0.56) 1.05 0.95 1.35 0.66 2.30 (0.47) 1 3 0.40 TYP 0.65 TYP 6 0.65 1.30 4 0.25~0.35 0.10 0.05 CAB C RECO M M ENDED LAND PATTERN O 2 PT A. DO NO FULLY CO ES T NFO TO JEDEC REG RM ISTRATIO N M -229 DATED AUG O /2003 B. DIM ENSIO ARE IN M NS ILLIM ETERS. C. DIM ENSIO AND TO NS LERANCES PER ASM Y14.5M 1994 E , D. DRAW ING FILENAM M E: KT-M LP06Lrev2. (c)2008 Fairchild Semiconductor Corporation FDMA410NZ Rev.B 6 www.fairchildsemi.com FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM The Power Franchise(R) tm PDP SPMTM Power-SPMTM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TM TinyPowerTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM SmartMaxTM TinyWireTM SMART STARTTM SerDesTM SPM(R) STEALTHTM SuperFETTM UHC(R) SuperSOTTM-3 Ultra FRFETTM SuperSOTTM-6 UniFETTM SuperSOTTM-8 VCXTM SupreMOSTM VisualMaxTM SyncFETTM (R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2008 Fairchild Semiconductor Corporation FDMA410NZ Rev.B www.fairchildsemi.com |
Price & Availability of FDMA410NZ |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |